Poster presented at NSS2000 Conference, Lyon France, 15 - 20 October 2000

 

Driving Energy Resolution to the Noise Limit

in Semiconductor Gamma Detector Arrays

 

Uri Lachish

guma science, P.O. Box 2104, Rehovot 76120, Israel

 

 

Shape time adjustment below the electron transition time from contact to contact enhances resolution

 

 

 

 

 

 

 

 

 

 

 

Published Data:

Resolution higher than theory

 

 

Ref.

Source (kev)

(1)

a/d

(2)

Line width (%)

(3)
     

Measured

Calculated

[1]

22Na (511)

0.3

2.13

2.7

[2]

133Ba(356)

0.38

2.6

4.2

[3]

137Cs(662)

0.38

1.7

4.2

 

(1). Gamma sources of nearly uniform excitation.

(2). a/d: ratio of pixel size to thickness.

(3). Calculation by small pixel theory.

 

 

  1. P.R. Bennet et al., IEEE Trans. Nucl. Sci., Vol 45, p. 417, 1998

  2. A. Shor, Y. Eisen and I. Mardor, Nucl. Instr. And Meth. A, Vol 428, p182, 1999

  3. U. El-Hanany, A. Shahar and A. Tsigelman, Proc. SPIE, Vol 3768, p 2, 1999

 

 

 

Consequence:

 

Gamma energy resolution of a single pixel, of a detector array *, improves dramatically by shape time optimization.

 

* Including single detector with a guard ring surrounding the positive contact.